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This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
DRAWN
(1200A/1200V-2in1 IGBT-Module)
MT5F16507
IGBT-Module
2MBI1200U4G-120
DWG.No.
CHECKED
DATE
14-Jul-05
14-Jul-05
NAME
T.Nishimura
H.Kakiki
Spec. No.
Type Name
Device Name
APPROVAL
T.Miyasaka
Specification
:
:
:
Tentative (Under developmemt)
Fuji Electric Device Technology Co.,Ltd. Matsumoto Factory
MT5F16507
1
14
H04-004-007
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Date
14-Jul-05 Classifi cation enactment Issued date Ind. Content Applied date
Revised Recor ds
DWG.No.
Drawn
H.Kakiki
Checked
MT5F16507
Approved
T.Miyasaka
Tentative (Under developmemt)
2
14
H04-004-006
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
2. Equivalent circuit
1. Outline Drawing ( Unit : mm )
sense emitter
gate
sense collector
main emitter
Type Name : 2MBI1200U4G-120
main collector
main emitter
main collector
DWG.No.
gate
PKG.No. M248
sense emitter
sense collector
MT5F16507
Tentative (Under developmemt)
3
14
H04-004-003
Tentative (Under developmemt)
3.Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified
Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Pc Tj Tstg Viso Mounting Screw Torque *2 Main Terminals Sense Terminals (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6)
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Conditions
Maximum Ratings 1200 20
Units V V
Continuous 1ms
Tc=25C Tc=80C Tc=25C Tc=80C
1600 1200 3200 2400 1200 2400 4960 150 -40 ~ +125 W C VAC Nm A
1ms 1 device
AC : 1min.
2500 5.75 10 2.5
Main Terminals 8~10 Nm (M8) Sense Terminals 1.7~2.5 Nm (M4) 4. Electrical characteristics ( at Tj= 25C unless otherwise specified)
Items
Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on
Symbols
ICES IGES VGE(th) VCE(sat)
(main terminal)
Conditions
VGE = 0V VCE = 1200V VCE = 0V VGE=20V VCE = 20V Ic = 1200mA VGE=15V Ic = 1200A Tj= 25C Tj=125C Tj= 25C Tj=125C
min.
5.5 -
Char acter istics typ. max.
6.5 2.20 2.40 1.90 2.10 135 1.35 0.65 0.80 0.20 1.95 2.05 1.65 1.75 0.45 0.25 1.0 1600 7.5 2.35 2.05 2.10 1.80 -
Units
mA nA V
VCE(sat)
(sense terminal)
V
Cies ton tr toff tf VF
(main terminal)
VCE=10V,VGE=0V,f=1MHz Vcc = 600V Ic = 1200A VGE=15V,Tj=125 Rgon = 3.3 Rgoff = 0.82 VGE=0V IF = 1200A IF = 1200A Tj= 25C Tj=125C Tj= 25C Tj=125C
nF
s
Turn-off
Forward on voltage
-
VF
(sense terminal)
V
Reverse recovery Lead resistance, terminal-chip *
(*)
trr R lead
s m
Biggest internal terminal resistance among arm.
DWG.No.
MT5F16507
4
14
H04-004-003
Tentative (Under developmemt)
5. Thermal resistance characteristics Items
Thermal resistance(1device) Contact Thermal resistance(1device)
Symbols
Rth(j-c) Rth(c-f) IGBT FWD
Conditions
min.
-
Char acter istics typ. max.
0.006 0.025 0.042 -
Units
C/W
with Thermal Compound (*)
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module Logo of pr oduction Lot.No. Sample.No.
2MBI1200U4G-120
1200A / 1200V
Place of manufactur ing (code) 7.Applicable category
This specification is applied to IGBT Module named 2MBI1200U4G-120 .
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
8.Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35C and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
90%

0V
L
0V VGE tr r Ir r
90%
VCE
Vcc
Ic

10%
90%
RG VGE
VCE Ic
0V 0A
Ic
10%
VCE
10%
tr ( i ) tr to n

to f f
tf
10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
DWG.No.
MT5F16507
5
14
H04-004-003
11.Reliability test results
Tentative (Under developmemt)
Reliability Test Items
Test categories
Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque
Test methods and conditions : 40N : 101 sec. : 1.8 ~ 2.1 N*m (M4) 4.25 ~ 5.75 N*m (M6) 8.0~ 10.0 N*m (M8) Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s 2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 1000m/s 2 Pulse width : 6.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Test humidity : 855% Test duration : 96hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
(Aug.-2001 edition)
Reference AcceptNumber norms ance EIAJ ED-4701 of sample number 5 5 (0:1) (0:1)
Test Method 401 Method Test Method 402 Method
Mechanical Tests
3 Vibration
Test Method 403 Reference 1 Condition code B
5
(0:1)
4 Shock
Test Method 404 Condition code A
5
(0:1)
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105
5 5 5
(0:1) (0:1) (0:1)
5
(0:1)
Environment Tests
5 Temperature Cycle
5
(0:1)
Dwell time Number of cycles 6 Thermal Shock Test temp.
Test Method 307
5
(0:1)
Method Condition code A
Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
DWG.No.
MT5F16507
6
14
H04-004-003
Tentative (Under developmemt)
Reliability Test Items
Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Reference AcceptNumber norms ance EIAJ ED-4701 of sample number 5 (0:1)
(Aug.-2001 edition)
Test Method 101
Test temp. Bias Voltage Bias Method
Endurance Tests Endurance Tests
Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
: Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
5
(0:1)
: Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr.
Test Method 102
5
(0:1)
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
: : : : : : : : :
4 Intermitted Operating Life (Power cycle) ( for IGBT )
852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles
Condition code C
Test Method 106
5
(0:1)
Failure Criteria
Item Electrical characteristic Characteristic Leakage current Gate threshold voltage Saturation voltage Forward voltage Thermal IGBT resistance FWD Isolation voltage Visual inspection Visual inspection Peeling Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. The visual sample or Symbol ICES IGES VGE(th) VCE(sat) VF VGE VCE VF Viso USLx1.2 mV Broken insulation Failure criteria Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 Unit mA A mA V V mV Note
DWG.No.
MT5F16507
7
14
H04-004-003
Tentative (Under developmemt)
Reliability Test Results
Test categories Reference norms EIAJ ED-4701
(Aug.-2001 edition)
Test items
Number Number of test of failure sample sample 5 5 5 5 5 5 5 5 5 5 0 0 0 0 0 0 * 0 0 0
1 Terminal Strength
Test Method 401 Method Test Method 402 Method
Mechanical Tests
(Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage
Test Method 403 Condition code B Test Method 404 Condition code B Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 Method Condition code A Test Method 101 Test Method 101 Test Method 102 Condition code C Test Method 106
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Environment Tests
3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 Thermal Shock
1 High temperature Reverse Bias
5 5 5 5
* 0 * 0
Endurance Tests
2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT )
* under confirmation
DWG.No.
MT5F16507
8
14
H04-004-003
Tentative (Under developmemt)
Collector current vs. Collector-Emitter voltage (typ.) Tj=25,sense terminal
2800 2400
Collector current : Ic [A]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C, sense terminal
2800
VGE=20V
15V
12V
Collector current : Ic [A]
2400 2000 1600 1200 800 400 8V 0 0.0
VGE=20V
15V 12V
2000 1600 1200 800 400 0 0.0 10V
10V
8V
1.0
2.0
3.0
4.0
5.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,sense terminal
2800 2400
Collector current : Ic [A] Collector - Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25,sense terminal
10
Tj=25C
Tj=125C
8
2000 1600 1200 800 400 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
6
4 Ic=2400A Ic=1200A Ic=600A
2
0 5 10 15 20 25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
1000
Capacitance : Cies, Coes, Cres [ nF ]
Dynamic Gate charge (typ.) Tj= 25C
1000
Collector-Emitter voltage:VCE[V]
25
Gate-Emitter voltage:VGE[V]
Cies 100
800 VCE VGE
20
600
15
10
Cres Coes
400
10
200
5
1 0 10 20 30
0 0 1000 2000 3000 4000 5000 Collector-Emitter voltage : VCE [V]
0 6000
Gate charge : Qg [ nC ]
DWG.No.
MT5F16507
9
14
H04-004-003
Tentative (Under developmemt)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rgon=3.3, Rgoff=0.82, Tj= 25C 1.8
Switching time : ton, tr, toff, tf [ us ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=15V, Tj= 25C 6.0
Switching time : ton, tr, toff, tf [ us ]
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 400 800 1200 1600 2000 Collector current : Ic [ A ] tr tf ton toff
ton 5.0 4.0 3.0 2.0 1.0 tf 0.0 0 2 4 6 8 10 12 14 16 18 Gate resistance : Rg [ ]
tr toff
Switching loss vs. Collector current (typ.)
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=15V, Tj= 25C 1000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Vcc=600V, VGE=15V, Rgon=3.3, Rgoff=0.82, Tj= 25C 500
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
450 400 350 300 250 200 150 100 50 0 0 400 800 1200 1600 2000 Collector current : Ic [ A ] , Forward current : IF [ A ] Err Eon Eoff
900 800 700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14
Eon
Eoff
Err 16 18
Gate resistance : Rg [ ]
Reverse bias safe operating area (max.)
VGE=15V ,Tj = 125C/ chip 2800 2400
Collector current : Ic [ A ]
2000 1600 1200 800 400 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]
DWG.No.
MT5F16507
10
14
H04-004-003
Tentative (Under developmemt)
Forward current vs. Forward on voltage (typ.) sense terminal
2800
Reverse recovery current : Irr [ A ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=15V, Rg=3.3, Tj=125 900 1.8 Irr 1.6 1.4 1.2 1.0 0.8 trr 0.6 0.4 0.2 0.0 2000
Reverse recovery time : trr [us]
2400
Forward current : IF [ A ]
Tj=25 Tj=125
800 700 600 500 400 300 200 100 0
2000 1600 1200 800 400 0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
400
800
1200
1600
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Transient thermal resistance (max.)
0.100
Thermal resistanse : Rth(j-c) [ C/W ]
FWD IGBT
0.010
0.001 0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
DWG.No.
MT5F16507
11
14
H04-004-003
Tentative (Under developmemt)
Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature).This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
DWG.No.
MT5F16507
12
14
H04-004-003
Tentative (Under developmemt)
Warnings
- If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
DWG.No.
MT5F16507
13
14
H04-004-003
Tentative (Under developmemt)
Cautions
- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability.
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
DWG.No.
MT5F16507
14
14
H04-004-003

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